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Issue No. 11 - Nov. (2017 vol. 66)
ISSN: 0018-9340
pp: 1918-1931
Duo Liu , College of Computer Science, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing, China
Kan Zhong , College of Computer Science, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing, China
Xiao Zhu , College of Computer Science, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing, China
Yang Li , College of Computer Science, Chongqing University, No. 174, Shazhengjie, Shapingba, Chongqing, China
Lingbo Long , College of Computer Science and Technology, Chongqing University of Posts and Telecommunications, Chongqing, China
Zili Shao , Department of Computing, Hong Kong Polytechnic University, Kowloon, Hong Kong
ABSTRACT
Smartphones are getting increasingly high-performance with advances in mobile processors and larger main memories to support feature-rich applications. However, the storage subsystem has always been a prohibitive factor that slows down the pace of reaching even higher performance while maintaining good user experience. Despite today’s smartphones are equipped with larger-than-ever main memories, they consume more energy and still run out of memory. But the slow NAND flash based storage vetoes the possibility of swapping—an important technique to extend main memory—and leaves a system that constantly terminates user applications under memory pressure. In this paper, we propose NVM-Swap by revisiting swapping for smartphones with fast, byte-addressable, non-volatile memory (NVM) technologies. Instead of using flash, we build the swap area with NVM, to allow high performance without sacrificing user experience. NVM-Swap supports Lazy Swap-in, which can reduce memory copy operations by giving the swapped out pages a second chance to stay in byte-addressable NVM backed swap area. To avoid fast worn-out of certain NVM, we also propose Heap-Wear, a wear leveling algorithm that distributes writes in NVM more evenly. Evaluation results based on the Google Nexus 5 smartphone show that our solution can effectively enhance smartphone performance and achieve better wear-leveling of NVM.
INDEX TERMS
Nonvolatile memory, Smart phones, Random access memory, Performance evaluation, Phase change materials, Mobile communication, Google,Smartphone, swapping, non-volatile memory, application relaunching delay
CITATION
Duo Liu, Kan Zhong, Xiao Zhu, Yang Li, Lingbo Long, Zili Shao, "Non-Volatile Memory Based Page Swapping for Building High-Performance Mobile Devices", IEEE Transactions on Computers, vol. 66, no. , pp. 1918-1931, Nov. 2017, doi:10.1109/TC.2017.2711620
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