An Efficient Technique for Leakage Current Estimation in Nanoscaled CMOS Circuits Incorporating Self-Loading Effects
Issue No. 07 - July (2010 vol. 59)
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/TC.2010.75
Ashesh Rastogi , Intel Corporation, Austin
Alodeep Sanyal , University of Massachusetts, Amherst
Sandip Kundu , University of Massachusetts, Amherst
Wei Chen , University of Massachusetts, Amherst
With the scaling of CMOS technology, subthreshold, gate, and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together, they account for more than 25 percent of power consumption in the current generation of leading edge designs. Different sources of leakage can affect each other by interacting through resultant intermediate node voltages. This is called the loading effect. In this paper, we propose a pattern dependent steady-state leakage estimation technique that incorporates loading effect and accounts for all three major leakage components, namely the gate, band-to-band-tunneling, and subthreshold leakage and accounts for transistor stack effect. By observing a recursive relationship between gate leakage and loading effect, we further refine our leakage estimation technique by developing a compact leakage model that supports iteration over node voltages based on Newton-Raphson method. The proposed estimation technique based on the compact model improves performance and capacity over SPICE. We report a speedup of 18,000\rm X over SPICE simulation on smaller circuits, where SPICE simulation is feasible. Results also show that loading effect is a significant factor in leakage and worsens with technology scaling.
Subthreshold leakage, gate leakage, band-to-band-tunneling leakage, loading effect, Newton-Raphson method.
Ashesh Rastogi, Alodeep Sanyal, Sandip Kundu, Wei Chen, "An Efficient Technique for Leakage Current Estimation in Nanoscaled CMOS Circuits Incorporating Self-Loading Effects", IEEE Transactions on Computers, vol. 59, no. , pp. 922-932, July 2010, doi:10.1109/TC.2010.75