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<p>Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.</p>
RAM; random-access memories; memory testing; coupled-cell faults; address lines; read/write control; address space; deterministic setting; automatic testing; fault tolerant computing; integrated circuit testing; integrated memory circuits; random-access storage.

J. Savir, W. McAnney and S. Vecchio, "Testing for Coupled Cells in Random-Access Memories," in IEEE Transactions on Computers, vol. 40, no. , pp. 1177-1180, 1991.
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