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A design strategy is presented for efficient and comprehensive parallel testing of high-density, MOS random-access memories (RAMs). Parallel test algorithms for RAMs have been developed on the basis of this design-for-testability approach for a broad class of pattern-sensitive faults. Two algorithms which are significantly more efficient than previous approaches are examined. The first algorith
parallel testing; pattern-sensitive faults; semiconductor random-access memories; design strategy; MOS; design-for-testability approach; reliability; linear complexity; integrated circuit testing; integrated memory circuits; MOS integrated circuits; random-access storage.

J. Patel and P. Mazumder, "Parallel Testing for Pattern-Sensitive Faults in Semiconductor Random-Access Memories," in IEEE Transactions on Computers, vol. 38, no. , pp. 394-407, 1989.
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