Parallel Computing in Electrical Engineering, 2004. International Conference on (2006)
Sept. 13, 2006 to Sept. 17, 2006
Carmen B. Navarrete , Universidad Autonoma de Madrid, Spain
Susana Holgado , Universidad Autonoma de Madrid, Spain
Eloy Anguiano , Universidad Autonoma de Madrid, Spain
Usually, theories of surface growth are based on the study of global processes without taking in account the local behaviour of atoms. We have implemented two Montecarlo simulations. In this work we present this two simulations. Both makes use of local principles of thermodynamic for atomic deposition, relaxation and diffusion of a growing surface, and are based on a simple model that allows us to simulate the growing process of a surface of a certain material. The first one is a quasi-static model whereas the second recreates the atomic interaction. The obtained results agree with those that use global theories and with experimental results of Scanning Tunneling Microscopy (STM).
Carmen B. Navarrete, Susana Holgado, Eloy Anguiano, "MPI and Non-MPI Simulations for Epitaxial Surface Growth", Parallel Computing in Electrical Engineering, 2004. International Conference on, vol. 00, no. , pp. 444-447, 2006, doi:10.1109/PARELEC.2006.53