Exploring Phase Change Memory and 3D Die-Stacking for Power/Thermal Friendly, Fast and Durable Memory Architectures
2009 18th International Conference on Parallel Architectures and Compilation Techniques (2009)
Raleigh, North Carolina, USA
Sept. 12, 2009 to Sept. 16, 2009
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/PACT.2009.30
Emerging three-dimensional (3D) integration technology allows for the direct placement of DRAM on top of a microprocessor, significantly reducing the wire-delay between the two and thereby alleviating memory latency and bandwidth constraints. However, the increase in power density of 3D technology leads to elevated on-chip temperature, which results in an exponential rise in charge leakage of DRAM. Consequently, the refresh frequency of 3D die-stacked DRAM needs to be doubled (or more) to retain data at the expense of additional power overhead. In this work, we investigate using Phase-change Random Access Memory (PRAM) as a promising candidate to achieve scalable, low power and thermal friendly memory system architecture in the upcoming 3D-stacking technology era. Using analytical model, circuit- and architectural- level simulations that capture both physical and electrical characteristics of PRAM, we show that the higher temperature of 3D chips is beneficial to PRAM power savings due to its unique, heat-driven programming mechanisms. Moreover, we show that the Through Silicon Vias (TSVs) ubiquitously used in 3D implementations contribute further PRAM power savings due to their substantially lower resistance to the high PRAM programming current. To effectively integrate PRAM into a conventional memory hierarchy, we propose architecture and OS support to address its write latency and reliability disadvantages. We present a hybrid PRAM/DRAM memory architecture and exploit an OS- level paging scheme to improve PRAM write performance and lifetime. Moreover, we leverage the error-correcting capability of strong ECC codes to expand PRAM lifespan and use wear-out aware OS page allocation to minimize ECC performance overhead. Our experimental results show that compared to die-stacked planar DRAM, our design reduces the overall power consumption of the memory system by 54% with 6% performance degradation, consequently alleviating the thermal constraint of 3D chips by up to 4.25°C and achieving a speedup of up to 1.1X. We also show that the lifetime can be improved by a factor of 114X using the proposed endurance optimization schemes.
W. Zhang and T. Li, "Exploring Phase Change Memory and 3D Die-Stacking for Power/Thermal Friendly, Fast and Durable Memory Architectures," 2009 18th International Conference on Parallel Architectures and Compilation Techniques(PACT), Raleigh, North Carolina, USA, 2009, pp. 101-112.