The Community for Technology Leaders
11th IEEE International On-Line Testing Symposium (2009)
Sesimbra-Lisbon, Portugal
June 24, 2009 to June 26, 2009
ISBN: 978-1-4244-4596-7
pp: 120-125
Sebastia Bota , Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
Gabriel Torrens , Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
Bartomeu Alorda , Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
ABSTRACT
In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x1.5 for events produced by alpha particles; this factor is even higher for longer induced current pulses. The impact of events propagated through the bit-lines is also analyzed. Results show that it is possible the occurrence of an upset in the Sense Amplifier producing a wrong output in the readout process without changing the memory cell stored value.
INDEX TERMS
CITATION

B. Alorda, S. Bota and G. Torrens, "Critical charge characterization in 6-T SRAMs during read mode," 11th IEEE International On-Line Testing Symposium(IOLTS), Sesimbra-Lisbon, Portugal, 2009, pp. 120-125.
doi:10.1109/IOLTS.2009.5195993
660 ms
(Ver 3.3 (11022016))