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11th IEEE International On-Line Testing Symposium (2009)
Sesimbra-Lisbon, Portugal
June 24, 2009 to June 26, 2009
ISBN: 978-1-4244-4596-7
pp: 109-113
A. Bougerol , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
N. Buard , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
F. Miller , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
ABSTRACT
This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.
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CITATION
A. Bougerol, N. Buard, F. Miller, "Novel DRAM mitigation technique", 11th IEEE International On-Line Testing Symposium, vol. 00, no. , pp. 109-113, 2009, doi:10.1109/IOLTS.2009.5195991
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