Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green's Function Formalism
2014 12th International Conference on Frontiers of Information Technology (FIT) (2014)
Dec. 17, 2014 to Dec. 19, 2014
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/FIT.2014.76
This paper demonstrates a comparative study of Silicon (Si) and Gallium Arsenide (GaAs) in Double Gate Silicon -- on-Insulator (DGSOI) MOSFET, where electrons, when held in a quantum well, are ballistic ally transported from source to drain. Different parameters like Density of States (DOS), current voltage (IV) characteristics and exchange correlation effects are compared and discussed using Non Equilibrium Green s' Function (NEGF) formulation.
Information technology, DGSOI MOSFETs, NEGF, Ballistic Transport, Density of States, Nanowire MOSFETs, DIBL
Ayesha Shaukat, Naz E. Islam, "Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green's Function Formalism", 2014 12th International Conference on Frontiers of Information Technology (FIT), vol. 00, no. , pp. 372-375, 2014, doi:10.1109/FIT.2014.76