Random Pattern Testability of the Open Defect Detection Method using Application of Time-variable Electric Field
Electronic Design, Test and Applications, IEEE International Workshop on (2002)
Christchurch, New Zealand
Jan. 29, 2002 to Jan. 31, 2002
Hiroyuki Yotsuyanagi , University of Tokushima
Masaki Hashizume , University of Tokushima
Taisuke Iwakiri , University of Tokushima
Masahiro Ichimiya , University of Tokushima
Takeomi Tamesada , University of Tokushima
In this paper, random pattern testability of the open defect defection method is discussed. In the test method, time-variable electric field is applied from the outside of ICs so as to vary the voltage at floating nodes caused by a defect. To detect opens the excessive supply current caused by the applied electric field is measured. The test pattern requirements for detecting opens are shown. The fault coverage for open defects is calculated for benchmark circuits. The experimental results shows random pattern can be effectively utilized for the test method even if it cannot attain high fault coverage for stuck-at faults.
open defects, supply current test, CMOS IC, time-variable electric field, test pattern generation
T. Iwakiri, M. Ichimiya, H. Yotsuyanagi, T. Tamesada and M. Hashizume, "Random Pattern Testability of the Open Defect Detection Method using Application of Time-variable Electric Field," Electronic Design, Test and Applications, IEEE International Workshop on(DELTA), Christchurch, New Zealand, 2002, pp. 387.