Computer Science and Information Engineering, World Congress on (2009)
Los Angeles, California USA
Mar. 31, 2009 to Apr. 2, 2009
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/CSIE.2009.972
A novel multiple-valued memory circuit design using multiple-peak negative differential resistance (NDR) circuit based on standard SiGe process is demonstrated. The NDR circuit is designed based on the combination of metal-oxide-semiconductor field-effect-transistor (MOS) and hetero-junction-bipolar-transistor (HBT) devices. However, we can obtain the multiple-peak negative differential resistance curves by suitably designing the MOS widths/lengths parameters. The memory circuit use four-peak MOS-HBT-NDR circuit as the driver and four constant current sources as the load. When we control the current sources on and off alternatively, we can obtain a sequence of multiple-valued logic output.
NDR, HBT, BiCMOS, MOS-HBT-NDR
C. Tsai et al., "Multiple-Valued Memory Design by Standard BiCMOS Technique," 2009 WRI World Congress on Computer Science and Information Engineering, CSIE(CSIE), Los Angeles, CA, 2009, pp. 596-599.