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2012 IEEE 21st Asian Test Symposium (2012)
Niigata, Japan Japan
Nov. 19, 2012 to Nov. 22, 2012
ISSN: 1081-7735
ISBN: 978-1-4673-4555-2
pp: 125-130
ABSTRACT
Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that both read and write operations may be affected by these defects. Especially, we demonstrate that resistive-bridge defects may have a local (single cell) or global (multiple cells) impact on the TAS-MRAM functioning. As these analysis results will be further used to develop effective test algorithms targeting faults related to actual resistive bridge-defects that may affect TAS-MRAM architecture.
INDEX TERMS
Magnetic fields, Computer architecture, Magnetic tunneling, Switches, Magnetization, Writing, Heating, test, non-volatile memories, spintronics, TAS-MRAM, resistive-bridge defects, fault modeling
CITATION

J. Azevedo et al., "Impact of Resistive-Bridge Defects in TAS-MRAM Architectures," 2012 IEEE 21st Asian Test Symposium(ATS), Niigata, Japan Japan, 2012, pp. 125-130.
doi:10.1109/ATS.2012.37
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