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2012 IEEE 21st Asian Test Symposium (2012)
Niigata, Japan Japan
Nov. 19, 2012 to Nov. 22, 2012
ISSN: 1081-7735
ISBN: 978-1-4673-4555-2
pp: 69
ABSTRACT
NAND Flash memories have rapidly emerged as a storage class memory such as SSD, CF Card, SD Card. Due to its distinct operation mechanisms, NAND Flash memory suffers from erase/program endurance, data retention and program/read disturbance problems. In this work, we propose an in-field testing technique which takes some pages in a block as predictors. We will discuss the proposed technique in detail in the poster session.
INDEX TERMS
Flash memory, Error correction codes, Laboratories, Computer architecture, North America, Computers
CITATION

Y. Hu, X. Gu and X. Li, "In-Field Testing of NAND Flash Storage: Why and How?," 2012 IEEE 21st Asian Test Symposium(ATS), Niigata, Japan Japan, 2012, pp. 69.
doi:10.1109/ATS.2012.71
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