2012 IEEE 21st Asian Test Symposium (2012)
Niigata, Japan Japan
Nov. 19, 2012 to Nov. 22, 2012
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ATS.2012.80
In this paper, we propose an evaluation method of characteristics variability of MOS transistors in an actual circuit with nanoprobing. Based on the evaluation of a huge scale test structure, we verified that the nanoprobing had ability for varia-bility evaluations. And the evaluation of SRAM cells in an actual LSI die, we confirmed that a variation of threshold voltage is normal distribution.
Large scale integration, Threshold voltage, MOSFETs, Semiconductor device measurement, Plugs, nanoprobing; variability; threshold voltage;
M. Fukui, Y. Nara and J. Fuse, "Characteristics Variability Evaluation of Actual LSI Transistors with Nanoprobing," 2012 IEEE 21st Asian Test Symposium(ATS), Niigata, Japan Japan, 2012, pp. 4.