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Issue No. 01 - January/February (2010 vol. 30)
ISSN: 0272-1732
pp: 143
Engin Ipek , University of Rochester
Bo Zhao , University of Pittsburgh
Jun Yang , University of Pittsburgh
Benjamin C. Lee , Stanford University
Onur Mutlu , Carnegie Mellon University
Ping Zhou , University of Pittsburgh
Doug Burger , Microsoft Research
Youtao Zhang , University of Pittsburgh
<p>Phase-change memory may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable DRAM alternative for scalable main memories.</p>
phase-change memory, PCM, technology scaling, memory architecture, energy efficiency, DRAM
Engin Ipek, Bo Zhao, Jun Yang, Benjamin C. Lee, Onur Mutlu, Ping Zhou, Doug Burger, Youtao Zhang, "Phase-Change Technology and the Future of Main Memory", IEEE Micro, vol. 30, no. , pp. 143, January/February 2010, doi:10.1109/MM.2010.24
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