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Issue No. 06 - November/December (2008 vol. 28)
ISSN: 0272-1732
pp: 37-46
Oguz Ergin , Intel Barcelona Research Center
Antonio González , Intel Barcelona Research Center and Universitat Politècnica de Catalunya
Xavier Vera , Intel Barcelona Research Center
James W. Tschanz , Circuit Research Labs, Intel Corporation
Jaume Abella , Intel Barcelona Research Center
Osman S. Unsal , Intel Barcelona Research Center
ABSTRACT
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids-some of a chip's most vulnerable wires. Refueling exploits EM's self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire's lifetime while reducing the chip area devoted to wires.
INDEX TERMS
reliability, testing, fault-tolerance, design styles, physical structures, advanced technologies, electromigration
CITATION
Oguz Ergin, Antonio González, Xavier Vera, James W. Tschanz, Jaume Abella, Osman S. Unsal, "Refueling: Preventing Wire Degradation due to Electromigration", IEEE Micro, vol. 28, no. , pp. 37-46, November/December 2008, doi:10.1109/MM.2008.92
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