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Issue No. 01 - January/February (2008 vol. 28)
ISSN: 0272-1732
pp: 60-68
Xiaoyao Liang , Harvard University
Ramon Canal , Universitat Politècnica de Catalunya
Gu-Yeon Wei , Harvard University
David Brooks , Harvard University
ABSTRACT
With continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the L1 data cache tolerates wide process variations with little performance degradation, making it a promising choice for on-chip cache structures for next-generation microprocessors.
INDEX TERMS
variability, process variation, caches, dynamic memory
CITATION

R. Canal, X. Liang, D. Brooks and G. Wei, "Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability," in IEEE Micro, vol. 28, no. , pp. 60-68, 2008.
doi:10.1109/MM.2008.12
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