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Issue No. 02 - March/April (2006 vol. 26)
ISSN: 0272-1732
pp: 68-80
Amit Agarwal , Intel Corp.
Saibal Mukhopadhyay , Purdue University
Arijit Raychowdhury , Purdue University
Kaushik Roy , Purdue University
Chris H. Kim , University of Minnesota
Leakage current in the nanometer regime has become a significant portion of power dissipation in CMOS circuits as threshold voltage, channel length, and gate oxide thickness scale downward. Various techniques are available to reduce leakage power in high-performance systems.
leakage power reduction, nanoscale circuits, CMOS, technology scaling

C. H. Kim, A. Raychowdhury, K. Roy, A. Agarwal and S. Mukhopadhyay, "Leakage Power Analysis and Reduction for Nanoscale Circuits," in IEEE Micro, vol. 26, no. , pp. 68-80, 2006.
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