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Issue No. 01 - January/February (2011 vol. 28)
ISSN: 0740-7475
pp: 64-71
Pang-Shiu Chen , MingShin University of Science & Technology, Hsinchu
Shyh-Shyuan Sheu , National Central University Industrial Technology Research Institute, Taoyuan Hsinchu
Kuo-Hsing Cheng , National Central University, Taoyuan
Heng-Yuan Lee , Industrial Technology Research Institute National Tsing Hua University, Hsinchu Hsinchu
Frederick T. Chen , Industrial Technology Research Institute, Hsinchu
Pei-Chia Chiang , Industrial Technology Research Institute, Hsinchu
Ming-Jinn Tsai , Industrial Technology Research Institute, Hsinchu
Wen-Pin Lin , Industrial Technology Research Institute, Hsinchu
Meng-Fan Chang , National Tsing Hua University, Hsinchu
Yu-Sheng Chen , Industrial Technology Research Institute National Tsing Hua University, Hsinchu Hsinchu
ABSTRACT
<p>Editor's note:</p><p>Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.</p><p align="right">&#x2014;Leland Chang, IBM T.J. Watson Research Center</p>
INDEX TERMS
design and test, resistive RAM, multilevel, fast access speed, nonvolatile memory, RRAM
CITATION
Pang-Shiu Chen, Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Heng-Yuan Lee, Frederick T. Chen, Pei-Chia Chiang, Ming-Jinn Tsai, Wen-Pin Lin, Meng-Fan Chang, Yu-Sheng Chen, "Fast-Write Resistive RAM (RRAM) for Embedded Applications", IEEE Design & Test of Computers, vol. 28, no. , pp. 64-71, January/February 2011, doi:10.1109/MDT.2010.96
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