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Issue No.01 - January/February (2011 vol.28)
pp: 52-63
Takayuki Kawahara , Hitachi Ltd., Kokubunji
<p>Editor's note:</p><p>Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.</p><p align="right">&#x2014;Chris H. Kim, University of Minnesota</p>
design and test, normally-off, instant-on, nonvolatile RAM (NVRAM), TMR device, spin-transfer torque, SPRAM, Gbit-scale memory, multibit operation, 4F2 memory cell
Takayuki Kawahara, "Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing", IEEE Design & Test of Computers, vol.28, no. 1, pp. 52-63, January/February 2011, doi:10.1109/MDT.2010.97
1. Y. Nakagome et al., "Review and Future Prospects of Low-Voltage RAM Circuits," IBM J. Research and Development, vol. 47, nos. 5/6, 2003, pp. 525-552.
2. R. Takemura et al., "A 32-Mb SPRAM with 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme," IEEE J. Solid-State Circuits, 2010, vol. 45, no. 4, pp. 869-879.
3. H. Aoki et al., "A Powerful Yet Ecological Parallel Processing System Using Execution-Based Adaptive Power-Down Control and Compact Quadruple-Precision Assist FPUs," Proc. IEEE Symp. VLSI Circuits, IEEE Press, 2008, pp. 186-187.
4. S. Matsunaga et al., "Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions," Applied Physics Express, vol. 1, no. 9, 2008, article 091301; .
5. J. Hayakawa et al., "Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions," Japan J. Applied Physics, vol. 44, no. 41, 2005, pp. 1267-1270.
6. C. Yoshida et al., "A Study of Dielectric Breakdown Mechanism in CoFeB/MgO/CoFeB Magnetic Tunnel Junction," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2009, pp. 139-142.
7. R. Takemura et al., "TMR Design Methodology for SPin-Transfer Torque RAM (SPRAM) with Nonvolatile and SRAM Compatible Operations," Proc. Non-Volatile Semiconductor Memory Workshop, 2008, and 2008 Int'l Conf. Memory Technology and Design (NVSMW/ICMTD 08), IEEE Press, 2008, pp. 54-56.
8. M. Endo et al., "Electric-Field Effects on Thickness Dependent Magnetic Anisotropy of Sputtered MgO/Co40Fe40B20/Ta Structures," Applied Physics Letters, vol. 96, no. 21, 2010, doi:10.1063/1.3429592.
9. J.-H. Park et al., "Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier," IEEE Trans. Magnetics, vol. 45, no. 10, 2009, pp. 3476-3479.
10. R. Takemura et al., "Highly-Scalable Disruptive Reading Scheme for Gb-Scale SPRAM and Beyond," Proc. IEEE Int'l Memory Workshop (IMW 10), IEEE Press, 2010, pp. 37-38.
11. T. Ishigaki et al., "A Multi-Level-Cell Spin-Transfer Torque Memory with Series-Stacked Magnetotunnel Junctions," Proc. Symp. VLSI Technology (VLSIT 10), IEEE Press, 2010, pp. 47-48.
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