
Issue No. 01 - January/February (2011 vol. 28)
ISSN: 0740-7475
pp: 52-63
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MDT.2010.97
Takayuki Kawahara , Hitachi Ltd., Kokubunji
ABSTRACT
<p>Editor's note:</p><p>Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.</p><p align="right">—Chris H. Kim, University of Minnesota</p>
INDEX TERMS
design and test, normally-off, instant-on, nonvolatile RAM (NVRAM), TMR device, spin-transfer torque, SPRAM, Gbit-scale memory, multibit operation, 4F2 memory cell
CITATION
T. Kawahara, "Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing," in IEEE Design & Test of Computers, vol. 28, no. , pp. 52-63, 2010.
doi:10.1109/MDT.2010.97
CITATIONS