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Issue No. 06 - November/December (2010 vol. 27)
ISSN: 0740-7475
pp: 26-35
Jason Schlessman , Princeton University
Saibal Mukhopadhyay , Georgia Institute of Technology
Minki Cho , Georgia Institute of Technology
Marilyn Wolf , Georgia Institute of Technology
Hamid Mahmoodi , San Francisco State University
ABSTRACT
<p><it>Editor's note:</it></p><p>Due to the high density requirement for embedded memories, such memories are highly vulnerable to process variation&#x2013;induced failures. A conservative design approach can largely affect memory density and access performance. This article analyzes variation effects in SRAM and presents low-cost, adaptive postsilicon repair mechanisms.</p><p align="right"><it>&#x2014;Swarup Bhunia, Case Western Reserve University</it></p>
INDEX TERMS
design and test, low-power, multimedia, SRAM, reconfiguration, process variations, image processing, postsilicon adaptation
CITATION
Jason Schlessman, Saibal Mukhopadhyay, Minki Cho, Marilyn Wolf, Hamid Mahmoodi, "Postsilicon Adaptation for Low-Power SRAM under Process Variation", IEEE Design & Test of Computers, vol. 27, no. , pp. 26-35, November/December 2010, doi:10.1109/MDT.2010.137
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