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Issue No. 02 - March/April (2010 vol. 27)
ISSN: 0740-7475
pp: 44-50
Darsen D. Lu , University of California, Berkeley
Chung-Hsun Lin , IBM Thomas J. Watson Research Center
Ali M. Niknejad , University of California, Berkeley
Chenming Hu , University of California, Berkeley
ABSTRACT
<p>Editor's note:</p><p>FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.</p><p align="right">&#x2014;Frank Liu, IBM Austin Research Lab</p>
INDEX TERMS
compact modeling, design and test, design for manufacturing, FinFET, multigate MOSFETs, SRAM, variability
CITATION

C. Hu, D. D. Lu, C. Lin and A. M. Niknejad, "Compact Modeling of Variation in FinFET SRAM Cells," in IEEE Design & Test of Computers, vol. 27, no. , pp. 44-50, 2010.
doi:10.1109/MDT.2010.39
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