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Issue No. 02 - March/April (2010 vol. 27)
ISSN: 0740-7475
pp: 6-7
Yu Cao , Arizona State University
Frank Liu , IBM Austin Research Laboratory
ABSTRACT
As CMOS technology is scaled down into the nanometer range, variation control becomes much more challenging, having a fundamental impact on all aspects of IC design. Although continual improvements in manufacturing processes are mitigating some of variability's negative effects, the semiconductor industry is starting to accept that some effects are better mitigated during the design phase. Handling variability in the design step will require accurate, consistent models of variability and its dependence on designable parameters, and of variability's spatial and temporal distributions. Such models are quite different from the "corner" models deployed thus far to model manufacturing variability. Consequently, the compact modeling of systematic, spatial, and random variations is essential to abstract the physical-level variations into a format that designers can use.
INDEX TERMS
Semiconductor device modeling, CMOS technology, Manufacturing processes, Fluctuations, Integrated circuit modeling, Semiconductor device manufacture, Very large scale integration, CMOS process, Data mining, Virtual manufacturing
CITATION

Y. Cao and F. Liu, "Guest Editors' Introduction: Compact Variability Modeling in Scaled CMOS Design," in IEEE Design & Test of Computers, vol. 27, no. 2, pp. 6-7, .
doi:10.1109/MDT.2010.47
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