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Issue No. 04 - July/August (1986 vol. 3)
ISSN: 0740-7475
pp: 56-64
Jerry Soden , Sandia National Laboratories
Charles Hawkins , University of New Mexico
Gate oxide shorts are defects that must be detected to produce high-reliability ICs. These problems will continue as devicesare scaled down and oxide thicknesses are reduced to the 100-? range. Complete detection of gate oxide shorts and other CMOSfailure mechanisms requires measuring the IDD current during the quiescent state after each test vector is applied to theIC. A 100-percent stuck-at fault test set is effective only if each test vector is accompanied by an IDD measurement. Thisarticle examines the need for a fast, sensitive method of measuring IDD during each test vector and discusses problems confrontingCMOS IC designers, test engineers and test instrumentation designers as they work to meet these demands.

C. Hawkins and J. Soden, "Test Considerations for Gate Oxide Shorts in CMOS ICs," in IEEE Design & Test of Computers, vol. 3, no. , pp. 56-64, 1986.
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