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Issue No. 02 - Mar.-Apr. (2017 vol. 19)
ISSN: 1521-9615
pp: 51-62
Paolo A. Gargini , International Roadmap for Devices and Systems (IRDS)
ABSTRACT
The combination of Moore's law and Dennard's scaling laws constituted the fundamental guidelines that provided the semiconductor industry with the foundation of a technically and economically viable roadmap until the end of the previous century. During this time, the transistor evolved from bipolar to PMOS to NMOS to CMOS. However, by the mid-1990s it was clear that fundamental physical limits of the MOS transistor were going to halt Dennard's scaling by 2005, at best. Eventually the power consumed by a single IC, under the relentless growth in the number of transistors and the continuous increase in operating frequency, pushed the IC temperature beyond reliable limits. Several new memory devices operating on completely new physics principles have been invented in the past 10 years and have already demonstrated that computing performance can be substantially improved by monolithically integrating several of these new heterogeneous memory layers on top of logic layers powered by a combination of CMOS and "new switch" transistors. This new phase, called 3D power scaling, will continue to support increase in transistor count at Moore's law pace well into the next decade.
INDEX TERMS
Switching circuits, Electronics industry, Random access memory, MOSFET, Moore's Law, Scientific computing, Memory management
CITATION
Paolo A. Gargini, "How to successfully overcome inflection points, or long live Moore's law", Computing in Science & Engineering, vol. 19, no. , pp. 51-62, Mar.-Apr. 2017, doi:10.1109/MCSE.2017.32
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