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Issue No.02 - March/April (2010 vol.12)
pp: 28-35
Gerhard Klimeck , Purdue University
Mathieu Luisier , Purdue University
<p>Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 years to provide insight into nanoscale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices on an atomistic basis has been the key element in matching experimental data and guiding experiments. The resulting insights led to the creation of OMEN, a new simulation engine.</p>
Nanoelectronics, parallel computing, computer-aided design, nanotechnology, high-performance computing, atomistic modeling and simulation, nanoscale semiconductor devices
Gerhard Klimeck, Mathieu Luisier, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN", Computing in Science & Engineering, vol.12, no. 2, pp. 28-35, March/April 2010, doi:10.1109/MCSE.2010.32
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18. M. Luisier, A. Schenk, and W. Fichtner, "Atomistic Treatment of Interface Roughness in Si Nanowire Transistors with Different Channel Orientations," Applied Physics Letters, vol. 90, no. 10, 2007, doi:10.1063/1.2711275.
19. M. Luisier and G. Klimeck, "Full-Band and Atomistic Simulation of N- and P-Doped Double-Gate Mosfets for the 22 nm Technology Node," Proc. Int'l Conf. Simulation Semiconductor Processes and Devices (SISPAD), IEEE Press, 2008, pp. 1–4, doi:10.1109/SISPAD.2008.4648226.
20. M. Luisier and G. Klimeck, "Atomistic, Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors," IEEE Electron Device Letters, vol. 30, 2009, pp. 602–604, doi:10.1109/LED.2009.2020442.
21. M. Luisier and G. Klimeck, "Performance Analysis of Statistical Samples of Graphene Nanoribbon Tunneling Transistors with Line Edge Roughness," Applied Physics Letters, vol. 94, no. 22, 2009; doi:10.1063/1.3140505.
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