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Issue No. 05 - September/October (2007 vol. 9)
ISSN: 1521-9615
pp: 46-52
Šimon Kos , Los Alamos National Laboratory
Marina Hruška , Los Alamos National Laboratory
Scott A. Crooker , Los Alamos National Laboratory
Avadh Saxena , Los Alamos National Laboratory
Darryl L. Smith , Los Alamos National Laboratory
ABSTRACT
A primary goal in semiconductor spintronics is to develop a new generation of functional devices that exploit not only an electron's charge (as in today's electronics industry) but also its spin. The authors show how a system of coupled spin drift-diffusion equations can accurately model spin-polarized electron transport in semiconductors. Numerical solutions allow for direct and quantitative comparison with experimental imaging data.
INDEX TERMS
semiconductor spintronics, electron charge, electronic spin, numerical solution
CITATION

A. Saxena, &. Kos, D. L. Smith, S. A. Crooker and M. Hruška, "Modeling Spin-Polarized Electron Transport in Semiconductors for Spintronics Applications," in Computing in Science & Engineering, vol. 9, no. , pp. 46-52, 2007.
doi:10.1109/MCSE.2007.104
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