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Online error detection and correction of erratic bits in register files
Found in: On-Line Testing Symposium, IEEE International
By X. Vera, J. Abella, J. Carretero, P. Chaparro, A. Gonzalez
Issue Date:June 2009
pp. 81-86
Aggressive voltage scaling needed for low power in each new process generation causes large deviations in the threshold voltage of minimally sized devices of the 6T SRAM cell. Gate oxide scaling can cause large transient gate leakage (a trap in the gate ox...
 
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