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Multiple-Valued Memory Design by Standard BiCMOS Technique
Found in: Computer Science and Information Engineering, World Congress on
By Dong-Shong Liang, Kwang-Jow Gan, Jenq-Jong Lu, Cheng-Chi Tai, Cher-Shiung Tsai, Geng-Huang Lan, Yaw-Hwang Chen
Issue Date:April 2009
pp. 596-599
A novel multiple-valued memory circuit design using multiple-peak negative differential resistance (NDR) circuit based on standard SiGe process is demonstrated. The NDR circuit is designed based on the combination of metal-oxide-semiconductor field-effect-...
 
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