Critical charge characterization in 6-T SRAMs during read mode
On-Line Testing Symposium, IEEE International
By Sebastia Bota, Gabriel Torrens, Bartomeu Alorda
Issue Date:June 2009
In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x1.5 for...