23rd IEEE VLSI Test Symposium (VTS'05) A CMOS RF RMS Detector for Built-in Testing of Wireless Transceivers Palm Springs, California May 01-May 05 ISBN: 0-7695-2314-5
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTS.2005.8
A CMOS RF RMS detector is introduced. It generates a DC proportional to the RMS voltage amplitude of an RF signal. Its high input impedance and small silicon area make it suitable for the built-in testing (BIT) of critical RF blocks of a transceiver such as a Low Noise Amplifier (LNA) and Power Amplifier (PA) without affecting their performance and with minimum area overhead. The use of this structure in the fault detection and diagnosis of a wireless transceiver is described and illustrated with an example. The transistor-level implementation of the proposed circuit is discussed in detail. Post-layout simulation results using CMOS 0.35 μm technology show that this testing device is able to perform an RF to DC conversion at 2.4GHz in a dynamic range of 20dB using an area of only 0.0135mm^2 and presenting an equivalent input capacitance of 22.5fF.
Citation:
Alberto Valdes-Garcia, Radhika Venkatasubramanian, Rangakrishnan Srinivasan, Jose Silva-Martinez, Edgar S?nchez-Sinencio, "A CMOS RF RMS Detector for Built-in Testing of Wireless Transceivers," vts, pp.249-254, 23rd IEEE VLSI Test Symposium (VTS'05), 2005 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||