23rd IEEE VLSI Test Symposium (VTS'05) Modeling and Testing of SRAM for New Failure Mechanisms Due to Process Variations in Nanoscale CMOS Palm Springs, California May 01-May 05 ISBN: 0-7695-2314-5
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTS.2005.58
In this paper, we have made a complete analysis of the emerging SRAM failure mechanisms due to process variations and mapped them to fault models. We have proposed two efficient test solutions for the process variation related failures in SRAM: (a) modification of March sequence, and (b) a novel low-overhead DFT circuit to complement the March test for an overall test time reduction of 29%, compared to the existing test technique with similar fault coverage.
Index Terms:
DFT, Failure mechanixm, March Test, Process Variation, SRAM
Citation:
Qikai Chen, Hamid Mahmoodi, Swarup Bhunia, Kaushik Roy, "Modeling and Testing of SRAM for New Failure Mechanisms Due to Process Variations in Nanoscale CMOS," vts, pp.292-297, 23rd IEEE VLSI Test Symposium (VTS'05), 2005 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||