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23rd IEEE VLSI Test Symposium (VTS'05)
Cantilever Type Probe Card for At-Speed Memory Test on Wafer
Palm Springs, California
May 01-May 05
ISBN: 0-7695-2314-5
Hitoshi Iwai, Toshiba Corporation Semiconductor Company
Atsushi Nakayama, Toshiba Corporation Semiconductor Company
Naoko Itoga, Toshiba Corporation Semiconductor Company
Kotaro Omata, Apex Inc.
In this paper, we present a new low cost probe card, which enables high speed (500MHz) memory test on wafer. Since it is difficult to characterize memory devices on wafer at high speed with a low cost probe card, then high speed memory test is usually conducted after assembling packages, although package test requires long lead time for test. We have tested Embedded DRAM at 500MHz on wafer with the new probe card which has Cantilever needles. The results show that the probe card can be used for memory at-speed test up to 500MHz.
Index Terms:
Probe Card, At-Speed, Memory, On Wafer, Test
Citation:
Hitoshi Iwai, Atsushi Nakayama, Naoko Itoga, Kotaro Omata, "Cantilever Type Probe Card for At-Speed Memory Test on Wafer," vts, pp.85-89, 23rd IEEE VLSI Test Symposium (VTS'05), 2005
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