Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM

V
VLSID
2007
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
Abstract - Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM

	This Article
	Subscribers, please Login Purchase article: $19 PDF IEEE Xplore Subscribers RSS feed
	Share
	Email this Article to a friend
	Bibliographic References
	ASCII Text BibTex RefWorks Procite/RefMan
	Add to:
	Digg Furl Spurl Blink Simpy Google Del.icio.us Y!MyWeb
	Search
	Similar Articles Articles by Masaaki Iijima Articles by Masayuki Kitamura Articles by Masahiro Numa Articles by Akira Tada Articles by Takashi Ipposhi

20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)

Bangalore, India

January 06-January 10

ISBN: 0-7695-2762-0

	ASCII Text	x
	Masaaki Iijima, Masayuki Kitamura, Masahiro Numa, Akira Tada, Takashi Ipposhi, "Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM," VLSI Design, International Conference on, pp. 609-614, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007.

	BibTex	x
	@article{ 10.1109/VLSID.2007.175, author = {Masaaki Iijima and Masayuki Kitamura and Masahiro Numa and Akira Tada and Takashi Ipposhi}, title = {Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM}, journal ={VLSI Design, International Conference on}, volume = {0}, year = {2007}, issn = {1063-9667}, pages = {609-614}, doi = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.175}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - VLSI Design, International Conference on TI - Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM SN - 1063-9667 SP609 EP614 A1 - Masaaki Iijima, A1 - Masayuki Kitamura, A1 - Masahiro Numa, A1 - Akira Tada, A1 - Takashi Ipposhi, PY - 2007 KW - null VL - 0 JA - VLSI Design, International Conference on ER -

Masaaki Iijima, Kobe University

Masayuki Kitamura, Kobe University

Masahiro Numa, Kobe University

Akira Tada, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan.

Takashi Ipposhi, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.175

This paper presents an SOI-SRAM design employing a bootstrap scheme for ultra low voltage operation. The Active Body-biasing Control (ABC) with PD-SOI is a key idea to enhance the boosting effect owing to a strong capacitive coupling. Our ABC-bootstrap scheme enables boosting the word line (WL) voltage higher than the supply voltage in short transition time without dual power supply rails. Simulation results have shown improvement in both the access time and operation at ultra low supply voltage less than 0.5V.

Citation:

Masaaki Iijima, Masayuki Kitamura, Masahiro Numa, Akira Tada, Takashi Ipposhi, "Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM," vlsid, pp.609-614, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007

Peer Review Notice | Give Us Feedback

Usage of this product signifies your acceptance of the Terms of Use.