Devices (and underlying materials and technology) are a starting point towards circuits, and ultimately systems designed using an appropriate architecture that can provide properties desired for the electronics environment. The current research in silicon nanoscale transistor area has a preponderance of efforts aimed towards improvement in electrostatics such as using nanowires and multiple gates or electrodynamics such as using strain to improve transport. I will discuss the more interesting of these as well as other unconventional attempts, and argue that while in the tradition of scaling and Moore?s law this looks appropriate, the imperatives of research of the moment are quite different and a significantly broader look is required.