Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems

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	Similar Articles Articles by Jayakumaran Sivagnaname Articles by Hung C. Ngo Articles by Kevin J. Nowka Articles by Robert K. Montoye Articles by Richard B. Brown

19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06)

Hyderabad, India

January 03-January 07

ISBN: 0-7695-2502-4

	ASCII Text	x
	Jayakumaran Sivagnaname, Hung C. Ngo, Kevin J. Nowka, Robert K. Montoye, Richard B. Brown, "Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems," VLSI Design, International Conference on, pp. 89-93, 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006.

	BibTex	x
	@article{ 10.1109/VLSID.2006.93, author = {Jayakumaran Sivagnaname and Hung C. Ngo and Kevin J. Nowka and Robert K. Montoye and Richard B. Brown}, title = {Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems}, journal ={VLSI Design, International Conference on}, volume = {0}, year = {2006}, issn = {1063-9667}, pages = {89-93}, doi = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2006.93}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - VLSI Design, International Conference on TI - Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems SN - 1063-9667 SP89 EP93 A1 - Jayakumaran Sivagnaname, A1 - Hung C. Ngo, A1 - Kevin J. Nowka, A1 - Robert K. Montoye, A1 - Richard B. Brown, PY - 2006 KW - null VL - 0 JA - VLSI Design, International Conference on ER -

Jayakumaran Sivagnaname, University of Michigan

Hung C. Ngo, IBM Austin Research Lab.

Kevin J. Nowka, IBM Austin Research Lab.

Robert K. Montoye, IBM Austin Research Lab.

Richard B. Brown, University of Utah

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VLSID.2006.93

Wide circuit implementation of Limited Switch Dynamic Logic (LSDL), a high performance logic circuit, with a modified pseudo-nMOS style load has been studied in this paper. A conventional two levels of 8-way mux implementation and a wide 64-way mux implementation of the 64-bit rotator circuit were used in the analysis. The resultant wide circuit implementation consumes less power, maintains robustness to noise and power rail bounce and reduces the pipeline depth to a single stage. The effect of process variation on circuit performance is evaluated. Based on the analysis, a new circuit style known as hybrid LSDL has been proposed.

Citation:

Jayakumaran Sivagnaname, Hung C. Ngo, Kevin J. Nowka, Robert K. Montoye, Richard B. Brown, "Gate-Induced Barrier Field Effect Transistor (GBFET) — A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems," vlsid, pp.89-93, 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006

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