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21st International Conference on VLSI Design (VLSI Design 2008)
Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer
Hyderabad, India
January 04-January 08
ISBN: 0-7695-3083-4
ASCII Text
x 
 
T.K. Bhattacharyya, Anandaroop Ghosh, "Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer," VLSI Design, International Conference on, pp. 595-600, 21st International Conference on VLSI Design (VLSI Design 2008), 2008.
 
 
BibTex
x
 
@article{ 10.1109/VLSI.2008.60,
author = {T.K. Bhattacharyya and Anandaroop Ghosh},
title = {Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2008},
issn = {1063-9667},
pages = {595-600},
doi = {http://doi.ieeecomputersociety.org/10.1109/VLSI.2008.60},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer
SN - 1063-9667
SP595
EP600
A1 - T.K. Bhattacharyya,
A1 - Anandaroop Ghosh,
PY - 2008
VL - 0
JA - VLSI Design, International Conference on
ER -
 
The paper presents a comprehensive behavioral model of a high precision tunneling accelerometer. Design and optimization of the silicon based tunneling has also been reported in this work. The accelerometer is CMOS compatible and has actuation voltage within CMOS bias levels. The proposed structure uniquely combines the electron tunneling based sensing and capacitive actuation. A feedback controller is designed to measure the acceleration under constant gap mode of operation. The full dynamic range of operation is 1 g ? to 200 g ? with a resolution in the order of nano-g. The cross-axis sensitivity is less than 1% and the shock survivability is 10g for a 10 ms shock with 0.1 ms rise time. The Brownian noise floor of the system has also been studied and the squeeze film damping effects on the system has been shown.
Citation:
T.K. Bhattacharyya, Anandaroop Ghosh, "Behavioral Modeling of a CMOS Compatible High Precision MEMS Based Electron Tunneling Accelerometer," vlsid, pp.595-600, 21st International Conference on VLSI Design (VLSI Design 2008), 2008
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