International Test Conference 2003 (ITC'03) Screening VDSM Outliers using Nominal and Subthreshold Supply Voltage IDDQ Charlotte, NC, USA September 30-October 02 ISBN: 0-7803-8107-6
Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-ProcessingTM (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The screen is demonstrated with 0.18?m and 0.13?m volume data. The screen's effectiveness is compared to stuck-at and other IDDQ screens.
Citation:
C. Schuermyer, B. Benware, K. Cota, R. Madge, R. Daasch, L. Ning, "Screening VDSM Outliers using Nominal and Subthreshold Supply Voltage IDDQ," itc, pp.565, International Test Conference 2003 (ITC'03), 2003 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||