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2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)
Taipei, Taiwan
August 02-August 04
ISBN: 0-7695-2572-5
Pei-Lin Pai, Nanya Technology Corp., Taiwan
This presentation starts with DRAM market overview, demand side DRAM bit shipment, content per box trend, followed by the DRAM density migration and the technology migration trend, including process migration, from micrometer to nanometer technology. As technology advances, 300mm fabrication and new generation products become the centerpiece of the future development of the DRAM industry. We present here worldwide 300mm capacity development forecast and the transition of DDR, DDR2, and DDR3, with a brief introduction of DDR3 features and advantages. Then we summarize the demand and supply trend of the DRAM industry. Finally, we conclude our presentation with the historical DRAM cell development and the comparison between Trench and Stack technologies.
Citation:
Pei-Lin Pai, "DRAM Industry Trend," mtdt, pp.xii, 2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06), 2006
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