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Sensor-Driven Reliability and Wearout Management
November/December 2009 (vol. 26 no. 6)
pp. 40-49
ASCII Text
x 
 
Prashant Singh, Cheng Zhuo, Eric Karl, David Blaauw, Dennis Sylvester, "Sensor-Driven Reliability and Wearout Management," IEEE Design and Test of Computers, vol. 26, no. 6, pp. 40-49, November/December, 2009.
 
 
BibTex
x
 
@article{ 10.1109/MDT.2009.155,
author = {Prashant Singh and Cheng Zhuo and Eric Karl and David Blaauw and Dennis Sylvester},
title = {Sensor-Driven Reliability and Wearout Management},
journal ={IEEE Design and Test of Computers},
volume = {26},
number = {6},
issn = {0740-7475},
year = {2009},
pages = {40-49},
doi = {http://doi.ieeecomputersociety.org/10.1109/MDT.2009.155},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - MGZN
JO - IEEE Design and Test of Computers
TI - Sensor-Driven Reliability and Wearout Management
IS - 6
SN - 0740-7475
SP40
EP49
EPD - 40-49
A1 - Prashant Singh,
A1 - Cheng Zhuo,
A1 - Eric Karl,
A1 - David Blaauw,
A1 - Dennis Sylvester,
PY - 2009
KW - design and test
KW - optimization
KW - oxide breakdown
KW - process variation
KW - reliability
KW - sensor
KW - time-to-failure
VL - 26
JA - IEEE Design and Test of Computers
ER -
 
Prashant Singh, University of Michigan
Cheng Zhuo, University of Michigan
Eric Karl, Intel Portland Technology Development
David Blaauw, University of Michigan
Dennis Sylvester, University of Michigan

Editor's note:

Gate oxide degradation is a key limiter to semiconductor reliability. Because of variations in gate oxide thickness, however, product reliability is often guaranteed by designing for the worst case. This article describes the use of oxide-degradation sensors and oxide-thickness sensors to reduce these design margins and enhance performance.

—Jim Tschanz, Intel

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Index Terms:
design and test, optimization, oxide breakdown, process variation, reliability, sensor, time-to-failure
Citation:
Prashant Singh, Cheng Zhuo, Eric Karl, David Blaauw, Dennis Sylvester, "Sensor-Driven Reliability and Wearout Management," IEEE Design and Test of Computers, vol. 26, no. 6, pp. 40-49, Nov./Dec. 2009, doi:10.1109/MDT.2009.155
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