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Modeling Low-k Dielectric Breakdown to Determine Lifetime Requirements
November/December 2009 (vol. 26 no. 6)
pp. 18-27
Editor's note:
Low-k dielectric breakdown and stress migration have emerged as new sources of wearout for on-chip interconnect. This article analyzes statistical data from a 45-nm test chip and constructs a methodology to determine the lifetime of low-k materials under process variations.
—Yu Cao, Arizona State University
1. Reprinted from Microelectronics Reliability, vol. 49, nos. 9-11, M. Bashir and L. Milor, "A Methodology to Extract Failure Rates for Low-kDielectric Breakdown with Multiple Geometries and in the Presence of Die-to-Die Linewidth Variation," pp. 1096-1102, ©2009, with permission from Elsevier.
2. C. Hong, L. Milor, and M.Z. Lin, "Analysis of the Layout Impact on Electric Fields in Interconnect Structures Using Finite Element Method," Microelectronics and Reliability, vol. 44, Sept.–Nov. 2004, pp. 1867-1871.
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4. F. Chen et al., "The Effect of Metal Area and Line Spacing on TDDB Characteristics of 45nm Low-kSiCOH Dielectrics," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2007, pp. 382-389.
5. E.Y. Wu and R.P. Vollertsen, "On the Weibull Shape Factor of Intrinsic Breakdown of Dielectric Films and Its Accurate Experimental Determination—Part 1: Theory, Methodology, Experimental Techniques," IEEE Trans. Electron Devices, vol. 49, no. 12, 2002, pp. 2131-2140.
6. E.Y. Wu et al., "Challenges for Accurate Reliability Projections in the Ultra-thin Oxide Regime," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 1999, pp. 57-65.
7. E.T. Ogawa et al., "Leakage, Breakdown, and TDDB Characteristics of Porous Low-kSilica-Based Interconnect Dielectrics," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2003, pp. 166-171.
8. G.S. Haase, E.T. Ogawa, and J.W. McPherson, "Reliability Analysis Method for Low-kInterconnect Dielectrics Breakdown in Integrated Circuits," J. Applied Physics, vol. 98, no. 3,2005, article 34503.
9. F. Chen et al., "A Comprehensive Study of Low-kSiCOH TDDB Phenomena and Its Reliability Lifetime Model Development," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2006, pp. 46-53.
10. F. Chen et al., "Investigation of CVD SiCOH Low-kTime-Dependent Dielectric Breakdown at 65nm Node Technology," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2005, pp. 501-507.
11. N. Suzumura et al., "A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics," Proc. IEEE Int'l Reliability Physics Symp., IEEE Press, 2006, pp. 484-489.
Index Terms:
design and test, line width variation, low-k dielectrics, semiconductor reliability
Citation:
Muhammad Bashir, Linda Milor, "Modeling Low-k Dielectric Breakdown to Determine Lifetime Requirements," IEEE Design and Test of Computers, vol. 26, no. 6, pp. 18-27, Nov./Dec. 2009, doi:10.1109/MDT.2009.151
