Emerging Nanoscale Memory and Logic Devices: A Critical Assessment May 2008 (vol. 41 no. 5) pp. 28-32
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MC.2008.154
As the semiconductor industry pursues increased functional density and performance, an ITRS working group considers the long-term potential of emerging nanodevices to replace ultimately scaled CMOS logic or memory device technology. 1. "Emerging Memory and Logic Devices—A Critical Assessment," International Technology Roadmap for Semiconductors: 2007 Edition, L. Wilson, ed., 2008, pp. 30–36.
Index Terms:
ITRS, CMOS, MOSFET, nanotechnology, memory, logic
Citation:
James A. Hutchby, Ralph Cavin, Victor Zhirnov, Joe E. Brewer, George Bourianoff, "Emerging Nanoscale Memory and Logic Devices: A Critical Assessment," Computer, vol. 41, no. 5, pp. 28-32, May 2008, doi:10.1109/MC.2008.154 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||