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Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)
Novel Voltage-Controlled Oscillator Design by MOS-NDR Devices and Circuits
Banff, Alberta, Canada
July 20-July 24
ISBN: 0-7695-2403-6
ASCII Text
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Dong-Shong Liang, Kwang-Jow Gan, Chung-Chih Hsiao, Cher-Shiung Tsai, Yaw-Hwang Chen, Shih-Yu Wang, Shun-Huo Kuo, Feng-Chang Chiang, Long-Xian Su, "Novel Voltage-Controlled Oscillator Design by MOS-NDR Devices and Circuits," System-on-Chip for Real-Time Applications, International Workshop on, pp. 372-375, Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05), 2005.
 
 
BibTex
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@article{ 10.1109/IWSOC.2005.87,
author = {Dong-Shong Liang and Kwang-Jow Gan and Chung-Chih Hsiao and Cher-Shiung Tsai and Yaw-Hwang Chen and Shih-Yu Wang and Shun-Huo Kuo and Feng-Chang Chiang and Long-Xian Su},
title = {Novel Voltage-Controlled Oscillator Design by MOS-NDR Devices and Circuits},
journal ={System-on-Chip for Real-Time Applications, International Workshop on},
volume = {0},
year = {2005},
isbn = {0-7695-2403-6},
pages = {372-375},
doi = {http://doi.ieeecomputersociety.org/10.1109/IWSOC.2005.87},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - System-on-Chip for Real-Time Applications, International Workshop on
TI - Novel Voltage-Controlled Oscillator Design by MOS-NDR Devices and Circuits
SN - 0-7695-2403-6
SP372
EP375
A1 - Dong-Shong Liang,
A1 - Kwang-Jow Gan,
A1 - Chung-Chih Hsiao,
A1 - Cher-Shiung Tsai,
A1 - Yaw-Hwang Chen,
A1 - Shih-Yu Wang,
A1 - Shun-Huo Kuo,
A1 - Feng-Chang Chiang,
A1 - Long-Xian Su,
PY - 2005
KW - null
VL - 0
JA - System-on-Chip for Real-Time Applications, International Workshop on
ER -
 
Dong-Shong Liang, Kun Shan University of Technology
Kwang-Jow Gan, Kun Shan University of Technology
Chung-Chih Hsiao, Kun Shan University of Technology
Cher-Shiung Tsai, Kun Shan University of Technology
Yaw-Hwang Chen, Kun Shan University of Technology
Shih-Yu Wang, Kun Shan University of Technology
Shun-Huo Kuo, Kun Shan University of Technology
Feng-Chang Chiang, Kun Shan University of Technology
Long-Xian Su, Kun Shan University of Technology
This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide- semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2V power supply. This VCO is fabricated by 0.35?m CMOS process and occupied an area of 120 x 86 ?m².
Citation:
Dong-Shong Liang, Kwang-Jow Gan, Chung-Chih Hsiao, Cher-Shiung Tsai, Yaw-Hwang Chen, Shih-Yu Wang, Shun-Huo Kuo, Feng-Chang Chiang, Long-Xian Su, "Novel Voltage-Controlled Oscillator Design by MOS-NDR Devices and Circuits," iwsoc, pp.372-375, Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05), 2005
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