Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) A High Efficiency 3GHz 24-dBm CMOS Linear Power Amplifier for RF Application Banff, Alberta, Canada July 20-July 24 ISBN: 0-7695-2403-6
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IWSOC.2005.11
This paper presents an improved CMOS class AB power amplifier for Radio Frequency (RF) applications. The power amplifier along with the pre-amplification stage has a fully differential structure suitable for mixed-signal System-On-Chip (SOC) implementation. Thorough simulations using a 3V single-ended power supply and 0.18?m TSMC CMOS process technology indicate a capability to deliver 24dBm to a 50.. antenna at a resonant frequency of 3GHz with a drain efficiency of almost 50%. In addition, the transient output waveform (@ 3GHz) indicates a high degree of linearity in the output with a Total Harmonic Distortion (THD) of around -58dB.
Citation:
S. M. Rezaul Hasan, "A High Efficiency 3GHz 24-dBm CMOS Linear Power Amplifier for RF Application," iwsoc, pp.503-507, Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05), 2005 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||