A 52 GHz VCO with Low Phase Noise Implemented in SiGe BiCMOS Technology

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The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03)

Calgary, Alberta, Canada

June 30-July 02

ISBN: 0-7695-1944-X

	ASCII Text	x
	Lin Jia, Alper Cabuk, Jian-Guo Ma, Kiat Seng Yeo, "A 52 GHz VCO with Low Phase Noise Implemented in SiGe BiCMOS Technology," System-on-Chip for Real-Time Applications, International Workshop on, pp. 264, The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03), 2003.

	BibTex	x
	@article{ 10.1109/IWSOC.2003.1213046, author = {Lin Jia and Alper Cabuk and Jian-Guo Ma and Kiat Seng Yeo}, title = {A 52 GHz VCO with Low Phase Noise Implemented in SiGe BiCMOS Technology}, journal ={System-on-Chip for Real-Time Applications, International Workshop on}, volume = {0}, year = {2003}, isbn = {0-7695-1944-X}, pages = {264}, doi = {http://doi.ieeecomputersociety.org/10.1109/IWSOC.2003.1213046}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - System-on-Chip for Real-Time Applications, International Workshop on TI - A 52 GHz VCO with Low Phase Noise Implemented in SiGe BiCMOS Technology SN - 0-7695-1944-X SP EP A1 - Lin Jia, A1 - Alper Cabuk, A1 - Jian-Guo Ma, A1 - Kiat Seng Yeo, PY - 2003 KW - null VL - 0 JA - System-on-Chip for Real-Time Applications, International Workshop on ER -

Lin Jia, Nanyang Technological University, eljia@ntu.edu.sg

Alper Cabuk, Nanyang Technological University, eljia@ntu.edu.sg

Jian-Guo Ma, Nanyang Technological University, eljia@ntu.edu.sg

Kiat Seng Yeo, Nanyang Technological University, eljia@ntu.edu.sg

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IWSOC.2003.1213046

A fully integrated 52 GHz millimeter wave LC VCO with -106 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO?s performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.

Citation:

Lin Jia, Alper Cabuk, Jian-Guo Ma, Kiat Seng Yeo, "A 52 GHz VCO with Low Phase Noise Implemented in SiGe BiCMOS Technology," iwsoc, pp.264, The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03), 2003

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