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The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03)
A Design of CMOS Broadband Amplifier With High-Q Active Inductor
Calgary, Alberta, Canada
June 30-July 02
ISBN: 0-7695-1944-X
ASCII Text
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Jhy-Neng Yang, Yi-Chang Cheng, Chen-Yi Lee, "A Design of CMOS Broadband Amplifier With High-Q Active Inductor," System-on-Chip for Real-Time Applications, International Workshop on, pp. 86, The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03), 2003.
 
 
BibTex
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@article{ 10.1109/IWSOC.2003.1213011,
author = {Jhy-Neng Yang and Yi-Chang Cheng and Chen-Yi Lee},
title = {A Design of CMOS Broadband Amplifier With High-Q Active Inductor},
journal ={System-on-Chip for Real-Time Applications, International Workshop on},
volume = {0},
year = {2003},
isbn = {0-7695-1944-X},
pages = {86},
doi = {http://doi.ieeecomputersociety.org/10.1109/IWSOC.2003.1213011},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - System-on-Chip for Real-Time Applications, International Workshop on
TI - A Design of CMOS Broadband Amplifier With High-Q Active Inductor
SN - 0-7695-1944-X
SP
EP
A1 - Jhy-Neng Yang,
A1 - Yi-Chang Cheng,
A1 - Chen-Yi Lee,
PY - 2003
KW - null
VL - 0
JA - System-on-Chip for Real-Time Applications, International Workshop on
ER -
 
Jhy-Neng Yang, National Chiao Tung University
Yi-Chang Cheng, Minghsin University of Science Technology
Chen-Yi Lee, National Chiao Tung University
A CMOS broadband amplifier with high-Q active inductor using 0.25um CMOS process is presented. In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the area of chip and the complexity. Advance Design System (ADS) simulator has been performed to verify the performance of the designed broadband amplifier. It has been shown that the amplifier has a 20dB(S21) power gain in -3dB bandwidth, S11 of -17dB, S22 of ?21dB and noise figure (NF) of 8dB, under 2.5V power supply with 18mW power consumption.*
Citation:
Jhy-Neng Yang, Yi-Chang Cheng, Chen-Yi Lee, "A Design of CMOS Broadband Amplifier With High-Q Active Inductor," iwsoc, pp.86, The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC'03), 2003
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