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IEEE Computer Society Annual Symposium on VLSI (ISVLSI '07)
Subthreshold 1-Bit Full Adder Cells in sub-100 nm Technologies
Porto Alegre, Brazil
March 09-March 11
ISBN: 0-7695-2896-1
Vahid Moalemi, University of Tehran, Tehran, Iran
Ali Afzali-Kusha, University of Tehran, Tehran, Iran
In this paper, subthreshold 1-bit full adder cells in sub-100 nm technologies are investigated. The analysis is performed using fourteen different full adder cells operating in subthreshold region by decomposing them into smaller blocks. Both individual blocks and the complete full adder cells are simulated. The study, which is carried out for 65nm and 90nm standard CMOS technologies, includes power, delay, and power delay product as functions of supply voltage, frequency, size, and technology. In addition, for both technologies, the minimum required supply voltage for different circuits, are determined.
Citation:
Vahid Moalemi, Ali Afzali-Kusha, "Subthreshold 1-Bit Full Adder Cells in sub-100 nm Technologies," isvlsi, pp.514-515, IEEE Computer Society Annual Symposium on VLSI (ISVLSI '07), 2007
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