IEEE Computer Society Annual Symposium on VLSI: Emerging VLSI Technologies and Architectures (ISVLSI'06) Finite State Machine Implementation with Single-Electron Tunneling Technology Karlsruhe, Germany March 02-March 03 ISBN: 0-7695-2533-4
In this paper we propose an implementation technique for finite state machines using single-electron tunneling (SET) technology towards ultra-low power dissipation. We take an example from radio-frequency identification (RFID) systems, and implement the state machine based on single-electron encoded logic (SEEL). The circuit is simulated by SIMON (a simulator for SET circuits), and is compared favorably with its CMOS counterpart.
Citation:
Jialin Mi, Chunhong Chen, "Finite State Machine Implementation with Single-Electron Tunneling Technology," isvlsi, pp.237-241, IEEE Computer Society Annual Symposium on VLSI: Emerging VLSI Technologies and Architectures (ISVLSI'06), 2006 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||