IEEE Computer Society Annual Symposium on VLSI: New Frontiers in VLSI Design (ISVLSI'05)
Sensing Design Issues in Deep Submicron CMOS SRAMs
Tampa, Florida
May 11-May 12
ISBN: 0-7695-2365-X
In this paper, solutions to memory design issues in nanometer CMOS are presented. First a comparative study between various sense-amplifiers is presented in 70nm CMOS technology. Impact of process variation is studied on the performance of these sense-amplifiers. An improved Bit-line leakage compensation scheme is proposed to ensure proper sensing in presence of leakage. Performance benefit of upto 68% can be obtained using this technique.
Citation:
Aiyappan Natarajan, Vijay Shankar, Atul Maheshwari, Wayne Burleson, "Sensing Design Issues in Deep Submicron CMOS SRAMs," isvlsi, pp.42-45, IEEE Computer Society Annual Symposium on VLSI: New Frontiers in VLSI Design (ISVLSI'05), 2005