Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

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9th International Symposium on Quality Electronic Design (isqed 2008)

March 17-March 19

ISBN: 978-0-7695-3117-5

	ASCII Text	x
	Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang, "Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure," Quality Electronic Design, International Symposium on, pp. 531-536, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008.

	BibTex	x
	@article{ 10.1109/ISQED.2008.77, author = {Yue Fu and Jin He and Feng Liu and Jie Feng and Chenyue Ma and Lining Zhang}, title = {Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2008}, isbn = {978-0-7695-3117-5}, pages = {531-536}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.77}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Quality Electronic Design, International Symposium on TI - Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure SN - 978-0-7695-3117-5 SP531 EP536 A1 - Yue Fu, A1 - Jin He, A1 - Feng Liu, A1 - Jie Feng, A1 - Chenyue Ma, A1 - Lining Zhang, PY - 2008 KW - non-classical device modeling KW - core-shell KW - nanowire KW - quantum mechanical effect VL - 0 JA - Quality Electronic Design, International Symposium on ER -

Yue Fu

Jin He

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.77

This paper investigates the transport properties of the silicon-Germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy level, and channel current computation. Coupled Poisson’s equation to Schr?dinger’s equation for electrostatics calculation and electron structure to current transport equation for channel current computation, the electronic structure, quantized energy levels, relevant wave functions and charge distribution are solved self-consistently for the core-shell structure MOSFETs. Furthermore, based on these findings, the transistor performances, including the capacitance characteristics and drain current, are also predicted.

Index Terms:

non-classical device modeling, core-shell, nanowire, quantum mechanical effect

Citation:

Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang, "Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure," isqed, pp.531-536, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008

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